- Abstract:
-
Two dimensional III–VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point and extended atomic defects formed in mono-, bi-, and few-layer GaSe and InSe crystals is presented. Using state-of-the-art scanning transmission electron microscopy, it is observed that these materials can form both metal and selenium vacancies under the action of the electron bea...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Files:
-
-
(pdf)
-
- Publisher copy:
- 10.1021/acsnano.8b08253
-
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- Publisher:
- American Chemical Society Publisher's website
- Journal:
- ACS Nano Journal website
- Volume:
- 13
- Issue:
- 5
- Pages:
- 5112-5123
- Publication date:
- 2019-04-04
- Acceptance date:
- 2019-04-04
- DOI:
- EISSN:
-
1936-086X
- ISSN:
-
1936-0851
- Pmid:
-
30946569
- Pubs id:
-
pubs:999136
- UUID:
-
uuid:28bbe503-2edc-4585-91f5-b7361491565e
- Source identifiers:
-
999136
- Local pid:
- pubs:999136
- Language:
- English
- Keywords:
- Copyright holder:
- American Chemical Society
- Rights statement:
- © 2019 American Chemical Society.
- Notes:
- This is the accepted manuscript version of the article. The final version is available online from the American Chemical Society at: https://doi.org/10.1021/acsnano.8b08253
Journal article
Formation and healing of defects in atomically thin GaSe and InSe
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