Journal article icon

Journal article

Formation and healing of defects in atomically thin GaSe and InSe

Abstract:

Two dimensional III–VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point and extended atomic defects formed in mono-, bi-, and few-layer GaSe and InSe crystals is presented. Using state-of-the-art scanning transmission electron microscopy, it is observed that these materials can form both metal and selenium vacancies under the action of the electron bea...

Expand abstract
Publication status:
Published
Peer review status:
Peer reviewed

Actions


Access Document


Publisher copy:
10.1021/acsnano.8b08253

Authors


More by this author
Role:
Author
ORCID:
0000-0003-4259-7450
More by this author
Role:
Author
ORCID:
0000-0002-1333-9359
More by this author
Role:
Author
ORCID:
0000-0003-3351-5628
More by this author
Role:
Author
ORCID:
0000-0002-6216-8947
Expand authors...
Publisher:
American Chemical Society Publisher's website
Journal:
ACS Nano Journal website
Volume:
13
Issue:
5
Pages:
5112-5123
Publication date:
2019-04-04
Acceptance date:
2019-04-04
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
Pmid:
30946569
Pubs id:
pubs:999136
UUID:
uuid:28bbe503-2edc-4585-91f5-b7361491565e
Source identifiers:
999136
Local pid:
pubs:999136

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP