Journal article

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Abstract:: We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

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APA Style

Ullah, A., Burke, A., Micolich, A., Joyce, H., Wong-Leung, J., Tan, H., & Jagadish, C. (2013). Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors. Physica Status Solidi - Rapid Research Letters, 7(10), 911–914.

MLA Style

Ullah, A., et al. “Electronic Comparison of InAs Wurtzite and Zincblende Phases Using Nanowire Transistors.” Physica Status Solidi - Rapid Research Letters, vol. 7, no. 10, 2013, pp. 911–14.

Chicago Style

Ullah, A, A Burke, A Micolich, H Joyce, J Wong-Leung, H Tan, and C Jagadish. 2013. “Electronic Comparison of InAs Wurtzite and Zincblende Phases Using Nanowire Transistors.” Physica Status Solidi - Rapid Research Letters 7 (10): 911–14.
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Publisher copy:: 10.1002/pssr.201308014

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+ Ullah, A More by this author

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+ Burke, A More by this author

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+ Micolich, A More by this author

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+ Joyce, H More by this author

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+ Wong-Leung, J More by this author

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Journal:: Physica Status Solidi - Rapid Research Letters More from this journal
Volume:: 7
Issue:: 10
Pages:: 911-914
Publication date:: 2013-01-01
DOI:: 10.1002/pssr.201308014
EISSN:: 1862-6270
ISSN:: 1862-6254

Pubs id:: pubs:417426
UUID:: uuid:27adbbc2-c02b-4935-b99e-598256ac11c2
Local pid:: pubs:417426
Source identifiers:: 417426
Deposit date:: 2013-11-16

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Copyright date:: 2013

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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