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Partial dislocations in graphene and their atomic level migration dynamics.

Abstract:
We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acs.nanolett.5b02080

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More authors...

Publisher:
American Chemical Society
Journal:
Nano Letters More from this journal
Volume:
15
Issue:
9
Pages:
5950-5955
Publication date:
2015-08-27
Acceptance date:
2015-08-20
DOI:
EISSN:
1530-6992
ISSN:
1530-6984

Language:
English
Keywords:
Pubs id:
pubs:542758
UUID:
uuid:26ae2f18-20df-42f5-826f-77babba5f698
Local pid:
pubs:542758
Source identifiers:
542758
Deposit date:
2016-05-16

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