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The development of semi-insulating silicon substrates for microwave devices

Abstract:

The concept of fully encapsulated, semi-insulating silicon (SI-Si) Cz-SOI substrates for silicon microwave devices is presented. Results show that, using gold as a compensating impurity, a silicon resistivity of 180kΩcm can be achieved. Sufficiently high resistivity substrates for microwave applications are obtained by depositing gold on silicon and annealing for one hour at 1000°C. Silicon oxide and silicon nitride are considered as diffusion barriers for use in the new technology. At 1000°C...

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Publisher copy:
10.1149/1.2980291

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Host title:
ECS Transactions
Volume:
16
Issue:
6
Pages:
41-56
Publication date:
2008-01-01
DOI:
EISSN:
1938-6737
ISSN:
1938-5862
ISBN:
9781566776523
Pubs id:
pubs:294619
UUID:
uuid:237b0dba-643f-4b20-bbfa-2bfcfcbfb303
Local pid:
pubs:294619
Source identifiers:
294619
Deposit date:
2015-01-15

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