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The application of a fluctuating charge model to boron nitride/carbon composite two-dimensional networks

Abstract:
A model is developed to consider two-dimensional composite networks of BN and C. The fluctuating charge model (FCM) allows for charge to “flow” between atom sites depending on their relative electronegativities and the (local) atom environment. A range of both topological and site disorder are considered, ranging from single defects to pure site disorder on an ideal hexagonal lattice, to the formation of BN and C domains on both the hexagonal lattice and on amorphous networks constructed with varying degrees of topological disorder. Two Monte Carlo-based methods are employed to control the topological and site disorder. The site charges are dependent on the local environment both in terms of the coordination and topology and are found to be important in controlling domain growth.
Publication status:
Accepted
Peer review status:
Peer reviewed

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Sub-Department of Physical and Theoretical Chemistry
Role:
Author
ORCID:
0009-0001-1537-6591
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Sub-Department of Physical and Theoretical Chemistry
Oxford college:
Brasenose College
Role:
Author
ORCID:
0000-0003-4599-7943


Publisher:
IOP Publishing
Journal:
Journal of Physics: Condensed Matter More from this journal
Acceptance date:
2026-06-15
EISSN:
1361-648X
ISSN:
0953-8984


Language:
English
Pubs id:
2434370
Local pid:
pubs:2434370
Deposit date:
2026-06-17
ARK identifier:


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