Organic phototransistors with all-polymer bulk heterojunction layers of p-LEType and n-type sulfur-containing conjugated polymers

Journal article

All-polymer phototransistors were fabricated using both glass and flexible plastic film substrates by employing bulk heterojunction channel layers of p-type polymer (P3HT) and ntype polymer (THBT-ht). The devices could detect the entire visible light because the n-type polymer could sense photons in the deep red parts (>650 nm). The responsivity of devices was higher at the lower light intensity, while it could be controlled by varying the gate and/or drain voltages. Similar performances were measured for flexible all-polymer phototransistors with a bottom-source/drain and top-gate electrode configuration.

Authors: Han, H; Nam, S; Seo, J; Jeong, J; Kim, H

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: IEEE
• Journal: IEEE Journal of Selected Topics in Quantum Electronics
• Volume: 22
• Issue: 1
• Article number: 6000107
• Publication date: 2016-08-12
• Acceptance date: 2016-06-09
• DOI: 10.1109/JSTQE.2015.2447538
• EISSN: 1558-4542
• ISSN: 1077-260X
• Language: English
• Keywords: organic phototransistor; all-polymer; bulk heterojunction; n-type polymer