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Charge collection in irradiated HV-CMOS detectors

Abstract:

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures o...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1016/j.nima.2018.07.022

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Sub department:
Particle Physics
Role:
Author
ORCID:
0000-0002-6826-8340
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Name:
European Union's Horizon 2020 Research and Innovation Programme
Grant:
654168
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Name:
Slovenian Research Agency
Grant:
P1-0135
Publisher:
Elsevier
Journal:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment More from this journal
Volume:
924
Pages:
214-218
Publication date:
2018-07-23
Acceptance date:
2018-07-09
DOI:
EISSN:
1872-9576
ISSN:
0168-9002
Language:
English
Keywords:
Pubs id:
pubs:891608
UUID:
uuid:21ce5535-6ee7-4f3c-9a76-73b5d9ebc80b
Local pid:
pubs:891608
Source identifiers:
891608
Deposit date:
2019-02-19

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