Journal article
Charge collection in irradiated HV-CMOS detectors
- Abstract:
- Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Accepted manuscript, pdf, 416.6KB, Terms of use)
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- Publisher copy:
- 10.1016/j.nima.2018.07.022
Authors
- Publisher:
- Elsevier
- Journal:
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment More from this journal
- Volume:
- 924
- Pages:
- 214-218
- Publication date:
- 2018-07-23
- Acceptance date:
- 2018-07-09
- DOI:
- EISSN:
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1872-9576
- ISSN:
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0168-9002
- Language:
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English
- Keywords:
- Pubs id:
-
pubs:891608
- UUID:
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uuid:21ce5535-6ee7-4f3c-9a76-73b5d9ebc80b
- Local pid:
-
pubs:891608
- Source identifiers:
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891608
- Deposit date:
-
2019-02-19
Terms of use
- Copyright holder:
- Elsevier
- Copyright date:
- 2018
- Notes:
- © 2018 Elsevier B.V. This is the accepted manuscript version of the article. The final version is available online frmo Elsevier at: https://doi.org/10.1016/j.nima.2018.07.022
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