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Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates

Abstract:

When Ti is deposited on Si in the 600-700 °C temperature range, the lattice mismatch between the Ti-containing deposit and the Si substrate causes TiSix nanoislands to form. The nanoislands grow when annealed at temperatures above 800 °C. When the nanoislands (either unannealed or annealed) are exposed to a Si-containing precursor gas, the Ti catalyzes the decomposition of the gas, allowing one-dimensional nanowires to grow. If oxide-patterned Si substrates are used, the Ti islands form selec...

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Publication status:
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Authors


Kamins, TI More by this author
Williams, RS More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Harris, JS More by this author
Journal:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS and NANOSTRUCTURES
Volume:
13
Issue:
2-4
Pages:
995-998
Publication date:
2002-03-05
DOI:
ISSN:
1386-9477
URN:
uuid:1ea62217-08c9-4a31-a67d-70adc5e3c7a4
Source identifiers:
151497
Local pid:
pubs:151497

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