- Abstract:
-
When Ti is deposited on Si in the 600-700 °C temperature range, the lattice mismatch between the Ti-containing deposit and the Si substrate causes TiSix nanoislands to form. The nanoislands grow when annealed at temperatures above 800 °C. When the nanoislands (either unannealed or annealed) are exposed to a Si-containing precursor gas, the Ti catalyzes the decomposition of the gas, allowing one-dimensional nanowires to grow. If oxide-patterned Si substrates are used, the Ti islands form selec...
Expand abstract - Publication status:
- Published
- Publisher copy:
- 10.1016/S1386-9477(02)00287-4
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- Journal:
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS and NANOSTRUCTURES
- Volume:
- 13
- Issue:
- 2-4
- Pages:
- 995-998
- Publication date:
- 2002-03-05
- DOI:
- ISSN:
-
1386-9477
- URN:
-
uuid:1ea62217-08c9-4a31-a67d-70adc5e3c7a4
- Source identifiers:
-
151497
- Local pid:
- pubs:151497
- Language:
- English
- Keywords:
- Copyright date:
- 2002
Journal article
Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates
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