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Quantum anomalous Hall effect for metrology

Abstract:
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/5.0233689

Authors


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Role:
Author
ORCID:
0000-0001-7876-704X
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Role:
Author
ORCID:
0000-0002-6351-5699
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Role:
Author
ORCID:
0000-0003-4458-9358
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Role:
Author
ORCID:
0000-0002-6265-6887
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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Oxford college:
Christ Church
Role:
Author
ORCID:
0000-0001-7947-3692


Publisher:
American Institute of Physics
Journal:
Applied Physics Letters More from this journal
Volume:
126
Issue:
4
Article number:
040501
Publication date:
2025-01-27
Acceptance date:
2024-12-30
DOI:
EISSN:
1077-3118
ISSN:
0003-6951


Language:
English
Pubs id:
2080974
Local pid:
pubs:2080974
Deposit date:
2025-01-28

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