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Data for Corona charge in SiO2: kinetics and surface passivation for high efficiency silicon solar cells

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Matlab data set fro all figures in paper 'Corona charge in SiO2: kinetics and surface passivation for high efficiency silicon solar cells' incuding, Kelvin Prove, Capacitance Voltage and Lifetime measurements. This data presents a method by which capacitance-voltage measurements can be used in conjunction with Kelvin-probe measurements to calculate the location of charge within a dielectric layer. A first order kinetic model for the transport of corona deposited charge on a SiO2 films is proposed. The rate limiting step for corona charge migration into oxide films has been observed to be the injection of charge from the surface (air-SiO2 interface). Corona charge lies preferentially at the air-SiO2 and SiO2-Si interfaces, and its injection into SiO2 has been characterized as having an activation energy of ~ 50 meV. In this work, corona charge has produced SVR < 2.7 cm/s and J01 < 12 fA/cm2 which is within the requirements of high efficiency silicon solar cells. These results contribute to the understanding of corona charge in SiO2 with a view to its potential application as an external method of passivation for highly efficient silicon solar cells.
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1

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Department:
University of Oxford
Role:
Contributor, Creator
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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Contributor, Creator

Publisher:
University of Oxford
Publication date:
2016
Version number:
1
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Pubs id:
1480551
UUID:
uuid:1dd1ef08-692e-4054-a81b-72db7b591090
Local pid:
pubs:1480551
Deposit date:
2016-03-07
ARK identifier:

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