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Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics.

Abstract:

The electrical stability of low-voltage organic transistors based on phosphonic acid self-assembled monolayer (SAM) dielectrics is investigated using four different semiconductors. The threshold voltage shift in these devices shows a stretched-exponential time dependence under continuous gate bias with a relaxation time in the range of 10(3)-10(5) s, at room temperature. Differences in the bias instability of transistors based on different self-assembled monolayers and organic semiconductors ...

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Publication status:
Published

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Publisher copy:
10.1039/c1cp20769e

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
Journal:
Physical chemistry chemical physics : PCCP More from this journal
Volume:
13
Issue:
32
Pages:
14387-14393
Publication date:
2011-08-01
DOI:
EISSN:
1463-9084
ISSN:
1463-9076
Language:
English
Keywords:
Pubs id:
pubs:383442
UUID:
uuid:1b8e581a-cf75-4631-8608-3de0802479b4
Local pid:
pubs:383442
Source identifiers:
383442
Deposit date:
2013-11-17

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