Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond

Journal article

We introduce a method for measuring the full stress tensor in a crystal utilising the properties of individual point defects. By measuring the perturbation to the electronic states of three point defects with C 3 v symmetry in a cubic crystal, sufficient information is obtained to construct all six independent components of the symmetric stress tensor. We demonstrate the method using photoluminescence from nitrogen-vacancy colour centers in diamond. The method breaks the inverse relationship between spatial resolution and sensitivity that is inherent to existing bulk strain measurement techniques, and thus, offers a route to nanoscale strain mapping in diamond and other materials in which individual point defects can be interrogated. © 2013 AIP Publishing LLC.

Authors: Grazioso, F; Patton, B; Delaney, P; Markham, M; Twitchen, D

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 103
• Issue: 10
• Pages: 101905-101905
• Publication date: 2013-09-02
• DOI: 10.1063/1.4819834
• ISSN: 0003-6951
• Language: English