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REACTION-KINETICS FOR THE CBE GROWTH OF GAAS FROM TRIETHYLGALLIUM - COMPUTER MODELING STUDIES INCORPORATING RECENT SURFACE SPECTROSCOPIC DATA

Abstract:

A new model for the decomposition of triethylgallium on GaAs(100), with kinetic parameters derived from the results of surface science experiments, is presented. Deficiencies of early models are corrected by including surface coverage and site blocking effects, and lateral interactions between absorbed DEG species are included. The model successfully predicts variations in the rate of CBE growth of GaAs with substrate temperature, and addresses effects induced by variations in arsenic overpre...

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Publication status:
Published

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Host title:
JOURNAL OF CRYSTAL GROWTH
Volume:
120
Issue:
1-4
Pages:
63-70
Publication date:
1992-05-01
DOI:
ISSN:
0022-0248
Pubs id:
pubs:43920
UUID:
uuid:1b0d5e04-f563-4bfe-97c2-39ce230c66c0
Local pid:
pubs:43920
Source identifiers:
43920
Deposit date:
2012-12-19

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