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Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

Abstract:

We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic ions (1 and 2.4 MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2 THz when the ion i...

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Publisher copy:
10.1103/PhysRevB.70.235330

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
Physical Review B - Condensed Matter and Materials Physics More from this journal
Volume:
70
Issue:
23
Pages:
1-6
Publication date:
2004-12-01
DOI:
ISSN:
1098-0121
Language:
English
Pubs id:
pubs:191329
UUID:
uuid:1af75570-4946-44d4-9da5-7d42a8ee7568
Local pid:
pubs:191329
Source identifiers:
191329
Deposit date:
2012-12-19

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