Journal article
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
- Abstract:
-
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic ions (1 and 2.4 MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2 THz when the ion i...
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Bibliographic Details
- Journal:
- Physical Review B - Condensed Matter and Materials Physics
- Volume:
- 70
- Issue:
- 23
- Pages:
- 1-6
- Publication date:
- 2004-12-01
- DOI:
- ISSN:
-
1098-0121
Item Description
- Language:
- English
- Pubs id:
-
pubs:191329
- UUID:
-
uuid:1af75570-4946-44d4-9da5-7d42a8ee7568
- Local pid:
- pubs:191329
- Source identifiers:
-
191329
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2004
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