- Abstract:
-
Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100 degrees C and the temperature of support 800 degrees C. Specimens were examined by SEM, TEM, HRTEM and SAED. When the filament temperature was about 1900 degrees C globular polycrystalline diamond particles were grown. At a support temperature more then 800 degrees C SiC nanoparticles were formed. To investigate the ion etching process of the ...
Expand abstract - Publication status:
- Published
- Publisher copy:
- 10.1016/j.micron.2004.09.001
-
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- Journal:
- Micron (Oxford, England : 1993)
- Volume:
- 36
- Issue:
- 1
- Pages:
- 81-88
- Publication date:
- 2005-01-01
- DOI:
- EISSN:
-
1878-4291
- ISSN:
-
0968-4328
- URN:
-
uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
- Source identifiers:
-
22125
- Local pid:
- pubs:22125
- Language:
- English
- Keywords:
- Copyright date:
- 2005
Journal article
TEM and HREM of diamond crystals grown on Si tips: structure and results of ion-beam-treatment.
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