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TEM and HREM of diamond crystals grown on Si tips: structure and results of ion-beam-treatment.

Abstract:

Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100 degrees C and the temperature of support 800 degrees C. Specimens were examined by SEM, TEM, HRTEM and SAED. When the filament temperature was about 1900 degrees C globular polycrystalline diamond particles were grown. At a support temperature more then 800 degrees C SiC nanoparticles were formed. To investigate the ion etching process of the ...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
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Journal:
Micron (Oxford, England : 1993)
Volume:
36
Issue:
1
Pages:
81-88
Publication date:
2005-01-01
DOI:
EISSN:
1878-4291
ISSN:
0968-4328
URN:
uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
Source identifiers:
22125
Local pid:
pubs:22125

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