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DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

Publication status:
Published

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Publisher copy:
10.1088/0268-1242/8/1S/085

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Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:
8
Issue:
1
Pages:
S380-S385
Publication date:
1993-01-01
Event title:
6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS
DOI:
EISSN:
1361-6641
ISSN:
0268-1242


Keywords:
Pubs id:
pubs:27889
UUID:
uuid:19cbcf8c-97c9-45e7-9fb8-7fa2bfdd44b7
Local pid:
pubs:27889
Source identifiers:
27889
Deposit date:
2012-12-19
ARK identifier:

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