High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics

Journal article

We report on optical studies of non-polar InGaN quantum dots grown on the (11$ \bar 2 $2) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (∼ 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measured lifetimes as low as 300 ps suggest a reduced internal electric field when compared with polar InGaN quantum dots. Temperature dependent micro-photoluminescence measurements on a single exciton with a lifetime of 327ps reveal no significant exciton linewidth broadening up to 120K, suggesting a reduction in phonon coupling strength when compared to polar quantum dots. This is supported by a measured lifetime of 313 ps for this exciton at 77 K, suggesting the measured exciton decay is almost purely radiative. © 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

Authors: Reid, B; Zhu, T; Chan, C; Kocher, C; Oehler, F

• Publication status: Published
• Journal: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4
• Volume: 11
• Issue: 3-4
• Pages: 702-705
• Publication date: 2014-01-01
• DOI: 10.1002/pssc.201300666
• EISSN: 1610-1642
• ISSN: 1862-6351
• Keywords: quantum dots; biexciton; non-polar; InGaN