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Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.

Abstract:

Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important applications in optoelectronics. The physical phenomena, which resulted in the failure of axial InAs nanowire growth on GaAs nanowires, was demonstrated. The vapor-liquid-solid (VPS) method was used for the growth of nanowire heterostructures. The changes in the growth directions of nanowires were studied by Transmission electron microscopy (TEM), which lead to the growth failure of InAs Axial gro...

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Publisher copy:
10.1002/smll.200700222

Authors


Paladugu, M More by this author
Auchterlonie, GJ More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
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Journal:
Small (Weinheim an der Bergstrasse, Germany)
Volume:
3
Issue:
11
Pages:
1873-1877
Publication date:
2007-11-05
DOI:
EISSN:
1613-6829
ISSN:
1613-6810
URN:
uuid:199ed561-4308-431d-b8d0-da499d7fcc2e
Source identifiers:
172652
Local pid:
pubs:172652

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