Conference item

Intersubband lifetimes in InAs/GaSb superlattices using saturated absorption spectroscopy

Abstract:: We investigate intersubband relaxation rates above the optical phonon energy in a InAs/GaSb superlattice using saturation spectroscopy. A high-intensity free-electron laser tuned to the intersubband transition energy is used to saturate the absorption process revealing picosecond relaxation rates. The effects of the parallel magnetic field and laser energy on the relaxation processes are explored. (C) 1998 Elsevier Science B.V. All rights reserved.

Publication status:: Published

Actions

Email

Email this record

Send the bibliographic details of this record to your email address.

Your Email
Please enter the email address that the record information will be sent to.

-
Your message (optional)
Please add any additional information to be included within the email.
Cite

Cite this record

APA Style

Poulter, A., Langerak, C., Lakrimi, M., Nicholas, R., Mason, N., & Walker, P. (1998). Intersubband lifetimes in InAs/GaSb superlattices using saturated absorption spectroscopy. 2(1-4), 330–333.

MLA Style

Poulter, A., et al. Intersubband Lifetimes in InAs/GaSb Superlattices Using Saturated Absorption Spectroscopy. no. 1-4, 1998, pp. 330–33.

Chicago Style

Poulter, A, C Langerak, M Lakrimi, R Nicholas, N Mason, and P Walker. 1998. “Intersubband Lifetimes in InAs/GaSb Superlattices Using Saturated Absorption Spectroscopy.” In , 2:330–33.
Share
Print

Access Document

Publisher copy:: 10.1016/S1386-9477(98)00069-1

Authors

+ Poulter, A More by this author

Role:: Author

+ Langerak, C More by this author

Role:: Author

+ Lakrimi, M More by this author

Role:: Author

+ Nicholas, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Mason, N More by this author

Role:: Author

More authors...

Journal:: PHYSICA E More from this journal
Volume:: 2
Issue:: 1-4
Pages:: 330-333
Publication date:: 1998-07-01
Event title:: 8th International Conference on Modulated Semiconductor Structures
DOI:: 10.1016/S1386-9477(98)00069-1
ISSN:: 1386-9477

Keywords:: InAs/GaSb

parallel field

intersubband lifetime
Pubs id:: pubs:9574
UUID:: uuid:18cc3f9b-de06-4b22-bde9-b93115bae51c
Local pid:: pubs:9574
Source identifiers:: 9574
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1998

Licence:: Terms and Conditions of Use for Oxford University Research Archive

Views and Downloads

About views and downloads

If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP