Surface-electrode ion trap design for near-field microwave quantum gates

Journal article

We present a design study into an ion trap electrode geometry for applying near-field microwave two-qubit gates. This design features an ‘S’-shaped meander electrode to passively null the microwave field. It has ground planes separating the meander electrode from all of the DC and single-qubit microwave electrodes, which should reduce the sensitivity of the microwave field distribution to the boundary conditions of these electrodes. We show that it is possible to design a single-layer trap with this geometry such that the simulated microwave field null overlaps with the RF field null, and that the positions of these nulls can be simulated to a precision of 100 nm with moderate computing resources. We also show that such a trap can be designed such that ion chains can be trapped, transported and split with feasible DC and RF voltages. While this particular design is optimized for 43Ca+ ions, our approach could be applied to other ions by changing the microwave frequency to match the corresponding qubit transition frequency

Authors: Tarlton, JE; Thompson, RC; Lucas, DM

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: Springer
• Journal: Applied Physics B: Lasers and Optics
• Volume: 129
• Issue: 6
• Pages: 89
• Article number: 89
• Publication date: 2023-05-10
• DOI: 10.1007/s00340-023-08030-x
• EISSN: 1432-0649
• ISSN: 0946-2171
• Language: English
• Keywords: Electrode; Quantum mechanics; Ion trap; Physics; Ion; Qubit; Materials science; Quantum; Field (mathematics); Microwave; Electric field; Mathematics; Atomic physics