Bias stability of solution-processed In₂O₃ thin film transistors

Journal article

We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out

Authors: Abdullah, I; Macdonald, JE; Lin, Y-H; Anthopoulos, TD; Salahr, NH

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: IOP Publishing
• Journal: JPhys Materials
• Volume: 4
• Issue: 1
• Pages: 015003-015003
• Publication date: 2020-10-29
• DOI: 10.1088/2515-7639/abc608
• EISSN: 2515-7639
• ISSN: 2515-7639
• Language: English
• Keywords: Thin film; Trapping; Engineering; Charge (physics); Channel (broadcasting); Computer science; Mathematics; Current (fluid); Nanotechnology; Quantum mechanics; Optoelectronics; Thermodynamics; Thin-film transistor; Layer (electronics); Electrical engineering; Biasing; Transfer (computing); Condensed matter physics; Stress (linguistics); Threshold voltage; Voltage; Physics; Transistor; Exponential function; Materials science