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INTERSUBBAND AND INTRASUBBAND RELAXATION OF HOT CARRIERS IN QUANTUM-WELLS PROBED BY TIME-RESOLVED RAMAN-SPECTROSCOPY

Abstract:
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantum wells and has revealed new information on the physics of the electron-phonon interaction. Measurements of inter-subband relaxation have for the first time revealed sub-picosecond scattering rates. Also, it has been demonstrated that intra-subband relaxation in narrow quantum wells is dominated by the emission of interface modes. Furthermore, the lifetime of LO phonons in quantum wells is found to be smaller than in bulk GaAs.
Publication status:
Published

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Publisher copy:
10.1088/0268-1242/7/3B/025

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Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:
7
Issue:
3B
Pages:
B102-B108
Publication date:
1992-03-01
Event title:
7TH INTERNATIONAL CONF ON HOT CARRIERS IN SEMICONDUCTORS ( HCIS-7 )
DOI:
EISSN:
1361-6641
ISSN:
0268-1242


Keywords:
Pubs id:
pubs:9997
UUID:
uuid:17d5a1a3-869c-4497-90c9-c730e412a01d
Local pid:
pubs:9997
Source identifiers:
9997
Deposit date:
2012-12-19
ARK identifier:

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