Conference item
INTERSUBBAND AND INTRASUBBAND RELAXATION OF HOT CARRIERS IN QUANTUM-WELLS PROBED BY TIME-RESOLVED RAMAN-SPECTROSCOPY
- Abstract:
- Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantum wells and has revealed new information on the physics of the electron-phonon interaction. Measurements of inter-subband relaxation have for the first time revealed sub-picosecond scattering rates. Also, it has been demonstrated that intra-subband relaxation in narrow quantum wells is dominated by the emission of interface modes. Furthermore, the lifetime of LO phonons in quantum wells is found to be smaller than in bulk GaAs.
- Publication status:
- Published
Actions
Access Document
- Publisher copy:
- 10.1088/0268-1242/7/3B/025
Authors
- Journal:
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
- Volume:
- 7
- Issue:
- 3B
- Pages:
- B102-B108
- Publication date:
- 1992-03-01
- Event title:
- 7TH INTERNATIONAL CONF ON HOT CARRIERS IN SEMICONDUCTORS ( HCIS-7 )
- DOI:
- EISSN:
-
1361-6641
- ISSN:
-
0268-1242
- Keywords:
- Pubs id:
-
pubs:9997
- UUID:
-
uuid:17d5a1a3-869c-4497-90c9-c730e412a01d
- Local pid:
-
pubs:9997
- Source identifiers:
-
9997
- Deposit date:
-
2012-12-19
- ARK identifier:
Terms of use
- Copyright date:
- 1992
If you are the owner of this record, you can report an update to it here: Report update to this record