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The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy

Abstract:

We have investigated the growth of thin layers of indium nitride (InN) on gallium nitride (GaN) by molecular beam epitaxy (MBE) using two different nitrogen sources. Using thermally cracked ammonia as the nitrogen source, we explored the effect of the V:III ratio by varying the ammonia pressure. With a low V:III ratio, we did not detect InN growth, and instead observed the formation of irregularly shaped indium islands on the GaN surface. With higher VAII ratios, nanostructure growth was obse...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
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Volume:
532
Pages:
806-810
Publication date:
2003-06-10
DOI:
ISSN:
0039-6028
URN:
uuid:17695569-766f-47ac-a674-799737dcb816
Source identifiers:
27179
Local pid:
pubs:27179

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