Conference item
The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy
- Abstract:
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We have investigated the growth of thin layers of indium nitride (InN) on gallium nitride (GaN) by molecular beam epitaxy (MBE) using two different nitrogen sources. Using thermally cracked ammonia as the nitrogen source, we explored the effect of the V:III ratio by varying the ammonia pressure. With a low V:III ratio, we did not detect InN growth, and instead observed the formation of irregularly shaped indium islands on the GaN surface. With higher VAII ratios, nanostructure growth was obse...
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- Publication status:
- Published
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- Publisher copy:
- 10.1016/S0039-6028(03)00125-0
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Bibliographic Details
- Journal:
- SURFACE SCIENCE
- Volume:
- 532
- Pages:
- 806-810
- Publication date:
- 2003-06-10
- Event title:
- 7th International Conference on Nanometer-Scale Science and Technology (NANO-7)/21st European Conference on Surface Science (ECOSS-21)
- DOI:
- ISSN:
-
0039-6028
- Source identifiers:
-
27179
Item Description
- Keywords:
- Pubs id:
-
pubs:27179
- UUID:
-
uuid:17695569-766f-47ac-a674-799737dcb816
- Local pid:
- pubs:27179
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2003
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