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Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition

Abstract:
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs core-shell nanowires exhibit strong photoluminescence as the AlGaAs shell passivates the GaAs nanowire surface reducing the surface nonradiative recombination. © 2007 IEEE.

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Publisher copy:
10.1109/OMEMS.2007.4373903

Authors


Host title:
2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS
Pages:
187-188
Publication date:
2007-01-01
DOI:
ISBN-10:
1424406412
ISBN-13:
9781424406418


Keywords:
Pubs id:
pubs:172745
UUID:
uuid:173a9954-05aa-46b3-9a4e-82490c8d0ca2
Local pid:
pubs:172745
Source identifiers:
172745
Deposit date:
2012-12-19
ARK identifier:

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