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Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures

Abstract:
Raman spectroscopy has been used to measure phonons in GaAs v-groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the structure, and the measured phonon frequencies provide structural information which shows clear evidence of GaAs migration during growth from (001) surfaces into the grooves. Confined and interface phonons with large in-(111) plane wavevectors are observed. © 1996 American Institute of Physics.
Publication status:
Published

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Publisher copy:
10.1063/1.115685

Authors


Maciel, AC More by this author
Freyland, JM More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Journal:
APPLIED PHYSICS LETTERS
Volume:
68
Issue:
11
Pages:
1519-1521
Publication date:
1996-03-11
DOI:
ISSN:
0003-6951
URN:
uuid:1701bf0a-5ddd-426e-b5c3-f138c8f776ab
Source identifiers:
5469
Local pid:
pubs:5469
Language:
English

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