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Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy

Abstract:

The valence and core levels of In2 O3 and Sn-doped In2 O3 have been studied by hard x-ray photoemission spectroscopy (hν=6000 eV) and by conventional AlKα (hν=1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-dope...

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Publication status:
Published

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Publisher copy:
10.1103/PhysRevB.81.165207

Authors


Koerber, C More by this author
Krishnakumar, V More by this author
Panaccione, G More by this author
Torelli, P More by this author
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Journal:
PHYSICAL REVIEW B
Volume:
81
Issue:
16
Publication date:
2010-04-15
DOI:
EISSN:
1550-235X
ISSN:
1098-0121
URN:
uuid:16eb5498-c6ab-4ee1-acce-663408a35f8e
Source identifiers:
54806
Local pid:
pubs:54806
Language:
English

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