Journal article
Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition
- Abstract:
- Highly conducting (ρ = 3.9 × 10-4 Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO)1-x(SiO2)x (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 889.1KB, Terms of use)
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- Publisher copy:
- 10.1063/1.4936613
Authors
- Publisher:
- American Institute of Physics
- Journal:
- Applied Physics Letters More from this journal
- Volume:
- 107
- Issue:
- 23
- Pages:
- 232103-232103
- Publication date:
- 2015-12-08
- Acceptance date:
- 2015-11-15
- DOI:
- EISSN:
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1077-3118
- ISSN:
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0003-6951
- Pubs id:
-
pubs:581184
- UUID:
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uuid:16bbe105-f6b8-45d4-bc91-ed06ef5f6a19
- Local pid:
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pubs:581184
- Source identifiers:
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581184
- Deposit date:
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2016-03-04
- ARK identifier:
Terms of use
- Copyright holder:
- AIP Publishing
- Copyright date:
- 2015
- Notes:
- © 2015 AIP Publishing LLC. This is the publisher's version of the article. The final version is available online from the American Institute of Physics at: [10.1063/1.4936613]
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