Journal article
OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
- Abstract:
- We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Å well.
- Publication status:
- Published
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- Publisher copy:
- 10.1063/1.98357
Authors
- Journal:
- APPLIED PHYSICS LETTERS More from this journal
- Volume:
- 51
- Issue:
- 8
- Pages:
- 590-592
- Publication date:
- 1987-08-24
- DOI:
- ISSN:
-
0003-6951
- Language:
-
English
- Pubs id:
-
pubs:26321
- UUID:
-
uuid:16919b8e-a55a-44b9-9730-7a5fcea5f78c
- Local pid:
-
pubs:26321
- Source identifiers:
-
26321
- Deposit date:
-
2012-12-19
- ARK identifier:
Terms of use
- Copyright date:
- 1987
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