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OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE

Abstract:
We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Å well.
Publication status:
Published

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Publisher copy:
10.1063/1.98357

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Journal:
APPLIED PHYSICS LETTERS More from this journal
Volume:
51
Issue:
8
Pages:
590-592
Publication date:
1987-08-24
DOI:
ISSN:
0003-6951


Language:
English
Pubs id:
pubs:26321
UUID:
uuid:16919b8e-a55a-44b9-9730-7a5fcea5f78c
Local pid:
pubs:26321
Source identifiers:
26321
Deposit date:
2012-12-19
ARK identifier:

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