Journal article
Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells
- Abstract:
- This paper presents techniques to tailor and optimize the field-effect passivation of silicon surfaces using the deposition and field-assisted migration of potassium ions. While field-effect passivation of this nature has previously been demonstrated using laboratory scale techniques, in this paper, it is shown how it can be realized using fast and scalable ion deposition and migration methods. Together, the deposition and migration processes are seen to produce excellent improvements to the surface passivation of oxidized 1-Ω·cm n-type float-zone silicon. Effective lifetimes as high as 2.1 ms are observed, in the best case yielding a surface recombination velocity as low as 3.3 cm/s with a corresponding surface dark saturation current density of 8.4 fA/cm2.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Accepted manuscript, pdf, 2.5MB, Terms of use)
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- Publisher copy:
- 10.1109/JPHOTOV.2018.2872032
Authors
- Publisher:
- Institute of Electrical and Electronics Engineers
- Journal:
- IEEE Journal of Photovoltaics More from this journal
- Publication date:
- 2018-10-08
- Acceptance date:
- 2018-09-21
- DOI:
- EISSN:
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2156-3381
- ISSN:
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2156-3381
- Keywords:
- Pubs id:
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pubs:921168
- UUID:
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uuid:16300ffd-a97e-4dab-b3d5-6a38dcd93624
- Local pid:
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pubs:921168
- Source identifiers:
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921168
- Deposit date:
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2018-09-25
- ARK identifier:
Terms of use
- Copyright holder:
- Institute of Electrical and Electronics Engineers
- Copyright date:
- 2018
- Notes:
- © 2018 IEEE. This is the accepted manuscript version of the article. The final version is available online from IEEE at: 10.1109/JPHOTOV.2018.2872032
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