Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation

Conference item

Measurements of edge emission on a GaN epilayer under N-2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time-resolved reflectance near the band edge, over a range of excitation densities. The excitons are bleached at high densities due to free carriers. A broad luminescence band is seen, extending similar to 100 meV below the low-density emission peak. We show that the onset of the stimulated emission coincides with the bleaching of the excitons (the Mott transition).

Authors: Taylor, R; Hess, S; Kyhm, K; Smith, J; Ryan, J

• Publication status: Published
• Journal: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
• Volume: 216
• Issue: 1
• Pages: 465-470
• Publication date: 1999-11-01
• Event title: 3rd International Conference on Nitride Semiconductors (ICNS 99)
• DOI: 10.1002/(SICI)1521-3951(199911)216:1<465::AID-PSSB465>3.0.CO;2-C
• EISSN: 1521-3951
• ISSN: 0370-1972
• Keywords: SYSTEM