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Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation

Abstract:

Measurements of edge emission on a GaN epilayer under N-2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time-resolved reflectance near the band edge, over a range of excitation densities. The excitons are bleached at high densities due to free carriers. A broad luminescence band is seen, extending similar to 100 meV below the low-density emissi...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Volume:
216
Issue:
1
Pages:
465-470
Publication date:
1999-11-05
DOI:
EISSN:
1521-3951
ISSN:
0370-1972
URN:
uuid:15826781-e63b-4209-8edb-97e5e2538032
Source identifiers:
17425
Local pid:
pubs:17425
Keywords:

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