Semi-insulating Czochralski-silicon for radio frequency applications

Conference item

Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and partial activation of Mn dopant atoms have been observed.

Authors: Mallik, K; Groot, d; Ashburn, P; Wilshaw, P

• Publication status: Published
• Journal: ESSDERC 2006: Proceedings of the 36th European Solid-State Device Research Conference
• Pages: 435-438
• Publication date: 2006-01-01
• Event title: 36th European Solid-State Device Research Conference
• ISSN: 1930-8876
• ISBN: 9781424403011
• Keywords: SUBSTRATE