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Semi-insulating Czochralski-silicon for radio frequency applications

Abstract:

Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and par...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
ESSDERC 2006: Proceedings of the 36th European Solid-State Device Research Conference
Pages:
435-438
Publication date:
2006-01-01
Event title:
36th European Solid-State Device Research Conference
ISSN:
1930-8876
Source identifiers:
12807
ISBN:
9781424403011
Keywords:
Pubs id:
pubs:12807
UUID:
uuid:150c339d-4a5c-485b-921f-981cbd55b3eb
Local pid:
pubs:12807
Deposit date:
2012-12-19

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