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Semi-insulating Czochralski-silicon for radio frequency applications

Abstract:

Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and par...

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Publication status:
Published

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Authors


de Groot, CH More by this author
Ashburn, P More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Pages:
435-438
Publication date:
2006
ISSN:
1930-8876
URN:
uuid:150c339d-4a5c-485b-921f-981cbd55b3eb
Source identifiers:
12807
Local pid:
pubs:12807
ISBN:
978-1-4244-0301-1
Keywords:

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