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Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

Abstract:
Photoluminescence measurements in mono- and bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.
Publication status:
Published
Peer review status:
Peer reviewed

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Files:
Publisher copy:
10.1038/s41598-018-23788-3

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics; Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Oxford college:
Queens College
Role:
Author
ORCID:
0000-0003-2578-9645


Publisher:
Nature Publishing Group
Journal:
Scientific Reports More from this journal
Volume:
8
Article number:
5380
Publication date:
2018-03-29
Acceptance date:
2018-03-20
DOI:
EISSN:
2045-2322
ISSN:
2045-2322
Pmid:
29599429


Language:
English
Pubs id:
pubs:834134
UUID:
uuid:14d914a0-2703-4bd9-a383-e93da8d95e11
Local pid:
pubs:834134
Source identifiers:
834134
Deposit date:
2018-04-15

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