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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures

Abstract:

We investigated locking of dislocations by oxygen atoms in Czochralski silicon. Experiments were carried out in the temperature range 350-850degreesC for different annealing times (10 s to 10000 h) and three different oxygen concentrations. It has been observed that the locking of dislocations as a function of annealing time has five well-defined regimes. From the 14 temperature dependence of the unlocking stress of dislocations the binding energy of oxygen to dislocations has been deduced. E...

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Publication status:
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Volume:
2002
Issue:
20
Pages:
171-182
Publication date:
2002-01-01
URN:
uuid:14d22cc1-2e84-49c3-bd97-6dcea742dda4
Source identifiers:
19077
Local pid:
pubs:19077
ISBN:
1-56677-344-X
Keywords:

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