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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures

Abstract:

We investigated locking of dislocations by oxygen atoms in Czochralski silicon. Experiments were carried out in the temperature range 350-850degreesC for different annealing times (10 s to 10000 h) and three different oxygen concentrations. It has been observed that the locking of dislocations as a function of annealing time has five well-defined regimes. From the 14 temperature dependence of the unlocking stress of dislocations the binding energy of oxygen to dislocations has been deduced. E...

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Publication status:
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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
HIGH PURITY SILICON VII, PROCEEDINGS
Volume:
2002
Issue:
20
Pages:
171-182
Publication date:
2002-01-01
Event title:
7th International Symposium on High Purity Silicon held at the 202nd Meeting of the Electrochemical-Society
Source identifiers:
19077
ISBN:
156677344X
Keywords:
Pubs id:
pubs:19077
UUID:
uuid:14d22cc1-2e84-49c3-bd97-6dcea742dda4
Local pid:
pubs:19077
Deposit date:
2012-12-19

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