Journal article

ESR-SPECTRA OF V4+ IONS IN SEMICONDUCTORY V3O7

Abstract:: ESR studies on the semiconductor V3O7 reveal the existence of intrinsic paramagnetic V4+ ions. Computer simulations of spectra suggest that the unpaired electron wavefunction extends over ca. 12-14 lattice sites. This partial delocalization of the wavefunction is assumed to arise from minor crystallographic distortions at low temperatures. © 1977.

Publication status:: Published

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APA Style

Edwards, P., Sienko, M., & Bayard, M. (1977). ESR-SPECTRA OF V4+ IONS IN SEMICONDUCTORY V3O7. SOLID STATE COMMUNICATIONS, 21(6), 525–528.

MLA Style

Edwards, P., et al. “ESR-SPECTRA OF V4+ IONS IN SEMICONDUCTORY V3O7.” SOLID STATE COMMUNICATIONS, vol. 21, no. 6, 1977, pp. 525–28.

Chicago Style

Edwards, P, M Sienko, and M Bayard. 1977. “ESR-SPECTRA OF V4+ IONS IN SEMICONDUCTORY V3O7.” SOLID STATE COMMUNICATIONS 21 (6): 525–28.
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Publisher copy:: 10.1016/0038-1098(77)90024-2

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+ Edwards, P More by this author

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+ Sienko, M More by this author

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+ Bayard, M More by this author

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Bibliographic Details

Journal:: SOLID STATE COMMUNICATIONS More from this journal
Volume:: 21
Issue:: 6
Pages:: 525-528
Publication date:: 1977-01-01
DOI:: 10.1016/0038-1098(77)90024-2
ISSN:: 0038-1098

Item Description

Language:: English
Pubs id:: pubs:46320
UUID:: uuid:14ae54ce-ddbd-46f2-9273-b76ed1cf4d9d
Local pid:: pubs:46320
Source identifiers:: 46320
Deposit date:: 2012-12-19

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Copyright date:: 1977

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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