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EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON

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APA Style

Boswell, E., & Wilshaw, P. (1993). EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON. 5TH INTERNATIONAL VACUUM MICROELECTRONICS CONF, 11(2), 412–415.

MLA Style

Boswell, E, and P Wilshaw. “EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON.” 5TH INTERNATIONAL VACUUM MICROELECTRONICS CONF, vol. 11, no. 2, 1993, pp. 412–15.

Chicago Style

Boswell, E, and P Wilshaw. 1993. “EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON.” In 5TH INTERNATIONAL VACUUM MICROELECTRONICS CONF, 11:412–15.
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Publisher copy:: 10.1116/1.586872

Authors

+ Boswell, E More by this author

Role:: Author

+ Wilshaw, P More by this author

Role:: Author

Journal:: JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B More from this journal
Volume:: 11
Issue:: 2
Pages:: 412-415
Publication date:: 1993-01-01
Event title:: 5TH INTERNATIONAL VACUUM MICROELECTRONICS CONF
DOI:: 10.1116/1.586872
ISSN:: 1071-1023

Keywords:: FIELD
Pubs id:: pubs:28206
UUID:: uuid:143c73a1-66ff-479b-902e-d11badb57255
Local pid:: pubs:28206
Source identifiers:: 28206
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_143c73a166ff479b902ed11badb57255

Terms of use

Copyright date:: 1993

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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