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Optical gain in GaN epilayers

Abstract:
We present optical gain and loss spectra measured over a range of carrier densities at low temperature in hexagonal GaN epilayers. We have determined the optical loss directly to be ∼80 cm-1. Photoluminescence spectra show that stimulated emission in our samples arises from electron-hole plasma recombination. © 1998 American Institute of Physics.

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Publisher copy:
10.1063/1.121754

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Journal:
Applied Physics Letters More from this journal
Volume:
73
Issue:
2
Pages:
199-201
Publication date:
1998-01-01
DOI:
ISSN:
0003-6951


Language:
English
Pubs id:
pubs:134630
UUID:
uuid:13e73406-3675-4740-bb24-ad0e676fb36e
Local pid:
pubs:134630
Source identifiers:
134630
Deposit date:
2012-12-19
ARK identifier:

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