Journal article
Optical gain in GaN epilayers
- Abstract:
- We present optical gain and loss spectra measured over a range of carrier densities at low temperature in hexagonal GaN epilayers. We have determined the optical loss directly to be ∼80 cm-1. Photoluminescence spectra show that stimulated emission in our samples arises from electron-hole plasma recombination. © 1998 American Institute of Physics.
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- Publisher copy:
- 10.1063/1.121754
Authors
- Journal:
- Applied Physics Letters More from this journal
- Volume:
- 73
- Issue:
- 2
- Pages:
- 199-201
- Publication date:
- 1998-01-01
- DOI:
- ISSN:
-
0003-6951
- Language:
-
English
- Pubs id:
-
pubs:134630
- UUID:
-
uuid:13e73406-3675-4740-bb24-ad0e676fb36e
- Local pid:
-
pubs:134630
- Source identifiers:
-
134630
- Deposit date:
-
2012-12-19
- ARK identifier:
Terms of use
- Copyright date:
- 1998
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