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Etching reactions of C2H5I on GaAs(100)

Abstract:

The surface reactions of ethyl iodide on GaAs(100) have been studied using Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Thermal Desorption Spectroscopy in conjunction with isotope scrambling experiments with deuterium. Ethyl iodide was found to adsorb dissociatively at room temperature, to form chemisorbed ethyl and iodine species. Recombinative desorption of molecular ethyl iodide competes with the further surface reactions of ethyl and iodine. The ethyl spec...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
SURFACE SCIENCE
Volume:
409
Issue:
2
Pages:
272-282
Publication date:
1998-07-01
DOI:
ISSN:
0039-6028
Source identifiers:
36541
Language:
English
Keywords:
Pubs id:
pubs:36541
UUID:
uuid:13d642c0-a862-4636-9781-ab29d96602fc
Local pid:
pubs:36541
Deposit date:
2012-12-19

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