Conference item
Anisotropy and polarity of hardness in III-V and group IV semiconductors
- Abstract:
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‘Hardness anisotropy’ is the variation of measured hardness with orientation of a low-symmetry indenter on a particular crystallographic plane. 'Hardness polarity' is the difference in hardness, measured using a high-symmetry indenter, between (hkl) and (hl:l) planes in non- centrosymmetric crystals. Results are presented for Ge, GaAs and InSb, for the temperature range 20-400 °C. Ge, GaAs and InSb all show hardness anisotropy on {001} faces, with indenter long-axis alignment along <100>...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Bibliographic Details
- Publisher:
- Institute of Physics
- Host title:
- 5th International Symposium on Structure and Properties of Dislocations in Semiconductors
- Journal:
- 5th International Symposium on Structure and Properties of Dislocations in Semiconductors More from this journal
- Publication date:
- 1986-03-01
- ISBN:
- 9780854980604
Item Description
- Keywords:
- Pubs id:
-
pubs:854257
- UUID:
-
uuid:13810b75-b6c1-48c6-85cd-2a32ac86370f
- Local pid:
-
pubs:854257
- Source identifiers:
-
854257
- Deposit date:
-
2018-05-30
Terms of use
- Copyright date:
- 1986
- Notes:
- This paper was presented at 5th International Symposium on Structure and Properties of Dislocations in Semiconductors, held in Moscow, March 1986.
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