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III-V nanowires for optoelectronic applications

Abstract:
We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells. © The Electrochemical Society.

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Publisher copy:
10.1149/05807.0093ecst

Authors


Publisher:
Electrochemical Society Inc.
Host title:
ECS Transactions
Volume:
58
Issue:
7
Pages:
93-98
Publication date:
2013-01-01
DOI:
EISSN:
1938-6737
ISSN:
1938-5862
Pubs id:
pubs:478426
UUID:
uuid:130d21d2-deb9-42f0-ad92-fa92e7dca4dd
Local pid:
pubs:478426
Source identifiers:
478426
Deposit date:
2014-08-16

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