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A Shunt-LDO for the Electron Ion Collider in a 110nm CMOS process

Abstract:
In this work we report on the development of a Shunt LDO (SLDO) for use in the serial powering chain of staves and discs at the Electron Ion Collider (EIC). The device is designed in a 110nm CMOS technology and can supply up to 1 A at a voltage of 1.1 to 1.4 V. Simulated PSRR at DC is -56 dB, and efficiency is above 70 %. Safety features such as load overcurrent protection and the ability to shunt the current of failed parallel SLDOs are included. A first prototype has been submitted. In this work we will report on the design of the device, and on simulation results of the prototype.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1088/1748-0221/21/03/c03031

Authors

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Role:
Author
ORCID:
0000-0002-0232-6966
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Institution:
University of Oxford
Role:
Author


Publisher:
IOP Publishing
Journal:
Journal of Instrumentation More from this journal
Volume:
21
Issue:
03
Article number:
C03031
Publication date:
2026-03-18
Acceptance date:
2026-01-27
DOI:
EISSN:
1748-0221


Language:
English
Keywords:
Pubs id:
2398985
Local pid:
pubs:2398985
Source identifiers:
3865606
Deposit date:
2026-03-18
ARK identifier:
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