Journal article
A Shunt-LDO for the Electron Ion Collider in a 110nm CMOS process
- Abstract:
- In this work we report on the development of a Shunt LDO (SLDO) for use in the serial powering chain of staves and discs at the Electron Ion Collider (EIC). The device is designed in a 110nm CMOS technology and can supply up to 1 A at a voltage of 1.1 to 1.4 V. Simulated PSRR at DC is -56 dB, and efficiency is above 70 %. Safety features such as load overcurrent protection and the ability to shunt the current of failed parallel SLDOs are included. A first prototype has been submitted. In this work we will report on the design of the device, and on simulation results of the prototype.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 2.6MB, Terms of use)
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- Publisher copy:
- 10.1088/1748-0221/21/03/c03031
Authors
- Publisher:
- IOP Publishing
- Journal:
- Journal of Instrumentation More from this journal
- Volume:
- 21
- Issue:
- 03
- Article number:
- C03031
- Publication date:
- 2026-03-18
- Acceptance date:
- 2026-01-27
- DOI:
- EISSN:
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1748-0221
- Language:
-
English
- Keywords:
- Pubs id:
-
2398985
- Local pid:
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pubs:2398985
- Source identifiers:
-
3865606
- Deposit date:
-
2026-03-18
- ARK identifier:
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Terms of use
- Copyright date:
- 2026
- Licence:
- CC Attribution (CC BY)
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