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Journal article

The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

Publication status:
Published

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Publisher copy:
10.1088/0957-4484/17/3/049

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Journal:
NANOTECHNOLOGY More from this journal
Volume:
17
Issue:
3
Pages:
913-916
Publication date:
2006-02-14
DOI:
EISSN:
1361-6528
ISSN:
0957-4484


Pubs id:
pubs:17082
UUID:
uuid:11e3e789-7c79-4b77-8462-aa1c2e234ef0
Local pid:
pubs:17082
Source identifiers:
17082
Deposit date:
2012-12-19
ARK identifier:

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