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Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminium on Si(100)

Abstract:
The reactions of trimethylaluminium leading to the deposition of Al on Si have been studied using LEED, XPS, AES, TDS and molecular beam scattering. Trimethylaluminium is shown to chemisorb on Si(100) subsequently decomposing to produce CH4(g) and contaminated Al layers. Al catalyses the decomposition reaction and opens up a new reaction channel, resulting in the evolution of C2H2(g).

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Publisher copy:
10.1088/0953-8984/1/SB/025

Authors


Jackman, RB More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Journal:
Journal of Physics: Condensed Matter
Volume:
1
Issue:
SB
Pages:
SB145-SB148
Publication date:
1989
DOI:
EISSN:
1361-648X
ISSN:
0953-8984
URN:
uuid:11ac42fa-69bb-4cdb-ad2f-e9d2e0b189ff
Source identifiers:
94419
Local pid:
pubs:94419
Language:
English

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