Conference icon

Conference

Quantum dots and nanowires for optoelectronic device applications

Abstract:

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffus...

Expand abstract

Actions


Access Document


Publisher copy:
10.1109/ICTON.2006.248327

Authors


Mokkapati, S More by this author
Expand authors...
Volume:
2
Pages:
242-245
Publication date:
2006
DOI:
URN:
uuid:10f058f3-433e-4be1-aa48-2d1d57b627e2
Source identifiers:
172713
Local pid:
pubs:172713
ISBN-10:
1424402360
ISBN-13:
9781424402366

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP