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Edge-enriched 2D MoS 2 thin films grown by chemical vapor deposition for enhanced catalytic performance

Abstract:
Chemical vapor deposition (CVD) is used to grow thin films of 2D MoS2 with nanostructure for catalytic applications in the hydrogen evolution reaction (HER). Tailoring of the CVD parameters results in an optimized MoS2 structure for the HER that consists of large MoS2 platelets with smaller layered MoS2 sheets growing off it in a perpendicular direction, which increases the total number of edge sites within a given geometric area. A surface area to geometric area ratio of up to ∼340 is achieved, benefiting from the edge-exposed high-porosity network structure. The optimized thickness of the MoS2 film is determined for maximum performance, revealing that increasing thickness leads to increased impedance of the MoS2 film and reduced current density. The current density of the optimum sample reaches as high as 60 mA/cm2geo (normalized by geometric area) at an overpotential of 0.64 V vs RHE (in 0.5 M H2SO4), with a corresponding Tafel slope of ∼90 mV/dec and exchange current density of 23 μA/cm2geo. The lowered Tafel slope and large exchange current density demonstrate that the high-porosity edge-exposed MoS2 network structure is promising as a HER catalyst.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acscatal.6b02663

Authors


More by this author
Institution:
University of Oxford
Oxford college:
Wolfson College
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Role:
Author


Publisher:
American Chemical Society
Journal:
ACS Catalysis More from this journal
Volume:
7
Issue:
1
Pages:
877-886
Publication date:
2016-12-27
Acceptance date:
2016-01-01
DOI:
EISSN:
2155-5435
ISSN:
2155-5435


Keywords:
Pubs id:
pubs:677381
UUID:
uuid:0fb634f3-dc55-470e-8e14-48111aef1cd0
Local pid:
pubs:677381
Source identifiers:
677381
Deposit date:
2017-02-08

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