Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Journal article

The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material. © 2008 American Institute of Physics.

Authors: Paladugu, M; Zou, J; Guo, Y; Zhang, X; Kim, Y

• Journal: Applied Physics Letters
• Volume: 93
• Issue: 10
• Pages: 101911-101911
• Publication date: 2008-01-01
• DOI: 10.1063/1.2978959
• ISSN: 0003-6951
• Language: English