Journal article

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Abstract:: The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III e...
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APA Style

Paladugu, M., Zou, J., Guo, Y., Zhang, X., Kim, Y., Joyce, H., Gao, Q., Tan, H., & Jagadish, C. (2008). Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures. Applied Physics Letters, 93(10), 101911–101911.

MLA Style

Paladugu, M., et al. “Nature of Heterointerfaces in GaAs/InAs and InAs/GaAs Axial Nanowire Heterostructures.” Applied Physics Letters, vol. 93, no. 10, 2008, pp. 101911–11.

Chicago Style

Paladugu, M, J Zou, Y Guo, X Zhang, Y Kim, H Joyce, Q Gao, H Tan, and C Jagadish. 2008. “Nature of Heterointerfaces in GaAs/InAs and InAs/GaAs Axial Nanowire Heterostructures.” Applied Physics Letters 93 (10): 101911–11.
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Publisher copy:: 10.1063/1.2978959

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+ Paladugu, M More by this author

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+ Zou, J More by this author

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+ Guo, Y More by this author

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+ Zhang, X More by this author

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+ Kim, Y More by this author

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Bibliographic Details

Journal:: Applied Physics Letters More from this journal
Volume:: 93
Issue:: 10
Pages:: 101911-101911
Publication date:: 2008-01-01
DOI:: 10.1063/1.2978959
ISSN:: 0003-6951

Item Description

Language:: English
Pubs id:: pubs:172744
UUID:: uuid:0f4ac1a3-784b-46fb-8497-530058c72685
Local pid:: pubs:172744
Source identifiers:: 172744
Deposit date:: 2012-12-19

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Copyright date:: 2008

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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