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Valley-addressable polaritons in atomically thin semiconductors

Abstract:

The locking of the electron spin to the valley degree of freedom in transition metal dichalcogenide (TMD) monolayers has seen these materials emerge as a promising platform in valleytronics1, 2. When embedded in optical microcavities, the large oscillator strengths of excitonic transitions in TMDs allow the formation of polaritons that are part-light part-matter quasiparticles3, 4, 5, 6, 7. Here, we report that polaritons in MoSe2 show an efficient retention of the valley pseudospin contrasti...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1038/nphoton.2017.125

Authors


Dufferwiel, S More by this author
Solnyshkov, DD More by this author
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Department:
Oxford, MPLS, Materials
Withers, F More by this author
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Funding agency for:
Trichet, AAP
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Funding agency for:
Smith, JM
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Grant:
Advanced Grant EXCIPOL no. 320570
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Publisher:
Springer Nature Publisher's website
Journal:
Nature Photonics Journal website
Volume:
11
Issue:
8
Pages:
497–501
Publication date:
2017-07-24
Acceptance date:
2017-06-22
DOI:
EISSN:
1749-4893
ISSN:
1749-4885
Pubs id:
pubs:713034
URN:
uri:0f1e0b66-f47b-4c1e-acbe-192a0c8080b5
UUID:
uuid:0f1e0b66-f47b-4c1e-acbe-192a0c8080b5
Local pid:
pubs:713034

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