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Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications

Abstract:

GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understan...

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Publisher copy:
10.1109/JSTQE.2010.2077621

Authors


Wong-Leung, J More by this author
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Journal:
IEEE Journal on Selected Topics in Quantum Electronics
Volume:
17
Issue:
4
Pages:
766-778
Publication date:
2011-07-05
DOI:
ISSN:
1077-260X
URN:
uuid:0eeb87a3-a2b7-40e8-b0fa-841379b78a7a
Source identifiers:
179430
Local pid:
pubs:179430

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