Journal article
Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
- Abstract:
-
GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understan...
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Bibliographic Details
- Journal:
- IEEE Journal on Selected Topics in Quantum Electronics More from this journal
- Volume:
- 17
- Issue:
- 4
- Pages:
- 766-778
- Publication date:
- 2011-07-01
- DOI:
- ISSN:
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1077-260X
Item Description
- Language:
-
English
- Keywords:
- Pubs id:
-
pubs:179430
- UUID:
-
uuid:0eeb87a3-a2b7-40e8-b0fa-841379b78a7a
- Local pid:
-
pubs:179430
- Source identifiers:
-
179430
- Deposit date:
-
2012-12-19
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- Copyright date:
- 2011
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