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Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires

Abstract:

We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved µPL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^((2) ) (0) = 0.28 (0.03) at 5 K. Studies on a statistically significant num...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1021/acs.nanolett.6b03980

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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Author
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Author
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Grant:
(FP7/2007-2013) 279361 (MACONS)
Publisher:
American Chemical Society Publisher's website
Journal:
Nano Letters Journal website
Volume:
16
Issue:
12
Pages:
7779–7785
Publication date:
2016-11-29
Acceptance date:
2016-11-29
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
Pubs id:
pubs:663686
URN:
uri:0ec2786f-c9a2-424b-aed4-191f3d8b0cc0
UUID:
uuid:0ec2786f-c9a2-424b-aed4-191f3d8b0cc0
Local pid:
pubs:663686

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