Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires

Journal article

We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved µPL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^((2) ) (0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.

Authors: Puchtler, T; Wang, T; Ren, C; Tang, F; Oliver, R

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: American Chemical Society
• Journal: Nano Letters
• Volume: 16
• Issue: 12
• Pages: 7779–7785
• Publication date: 2016-11-29
• Acceptance date: 2016-11-29
• DOI: 10.1021/acs.nanolett.6b03980
• EISSN: 1530-6992
• ISSN: 1530-6984
• Keywords: InGaN; polarized; m-plane; single photon; Quantum dot