- Abstract:
-
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved µPL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^((2) ) (0) = 0.28 (0.03) at 5 K. Studies on a statistically significant num...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Files:
-
-
(pdf, 3.3MB)
-
- Publisher copy:
- 10.1021/acs.nanolett.6b03980
-
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- Grant:
- EP/M012379/1 and EP/M011682/1
- Publisher:
- American Chemical Society Publisher's website
- Journal:
- Nano Letters Journal website
- Volume:
- 16
- Issue:
- 12
- Pages:
- 7779–7785
- Publication date:
- 2016-11-29
- Acceptance date:
- 2016-11-29
- DOI:
- EISSN:
-
1530-6992
- ISSN:
-
1530-6984
- Pubs id:
-
pubs:663686
- URN:
-
uri:0ec2786f-c9a2-424b-aed4-191f3d8b0cc0
- UUID:
-
uuid:0ec2786f-c9a2-424b-aed4-191f3d8b0cc0
- Local pid:
- pubs:663686
- Keywords:
- Copyright holder:
- American Chemical Society
- Copyright date:
- 2016
- Notes:
- © 2016 American Chemical Society. ACS AuthorChoice - This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Journal article
Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
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+ Engineering and Physical Sciences Research Council
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