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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES

Abstract:

The chemical beam epitaxy (CBE) growth of InGaAs lattice matched to InP has been compared using the three Ga precursors triethylgallium (TEG), triisobutylgallium (TIBG) and triisopropylgallium (TIPG) in conjunction with trimethylindium (TMI). All three Ga precursors exhibit similar behaviour with the Ga content of the epilayers falling rapidly as the temperatures moves outside a narrow growth window centred at 500°C. The Ga: In concentration ratio also depends on the group V:III flux ratios u...

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Publication status:
Published

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Authors


SKEVINGTON, P More by this author
RUSHWORTH, S More by this author
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Publisher:
Publ by Elsevier Science Publishers B.V.
Volume:
136
Issue:
1-4
Pages:
133-137
Publication date:
1994-03-05
DOI:
ISSN:
0022-0248
URN:
uuid:0ea9d83f-5142-44d8-8865-9a2f354b5a64
Source identifiers:
44424
Local pid:
pubs:44424

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