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A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si

Abstract:

A three-stage mechanism is discussed for the formation of "double half loops" observed by Perovic and Houghton (1992) in low misfit epitaxial layers of Ge-x Si1-x on Si. First, prismatic loops are nucleated in Ge precipitates at the interface to relieve their strain. Second, these loops are transformed into two glide loops on different (111) planes. Third, these loops bow out by growth of the precipitates in the epitaxial layer and expand along the interface. On reaching a critical size, the ...

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Publication status:
Published

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Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997
Issue:
157
Pages:
121-126
Publication date:
1997-01-01
Event title:
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:
0951-3248
Source identifiers:
28977
ISBN:
0750304642
Pubs id:
pubs:28977
UUID:
uuid:0e22c184-cf1a-49bc-836a-4f8b00053419
Local pid:
pubs:28977
Deposit date:
2012-12-19

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